A Dual Core Source/Drain GAA FinFET

The emergence of fin-shaped field effect transistors (FinFETs) was governed by the requirement VLSI industry to include more functionalities per unit chip area. Enhanced gate control in a FinFET due surrounding architecture built on fundamental geometry MOSFET made them highly compatible existing CMOS circuit applications. announcement vertically stacked multiple structure named as Ribbon-FET Intel Corporation 2021 motivates work presented this article. This article proposes dual core sourcedrain gate-all-around FinFET, and evaluates its performance terms variation doping concentrations through technology computer aided design (TCAD) simulations. advantage having source drain regions is opportunity tune metrics device altering concentration outer, inner cores. response optimized presence acceptor-like, donor-like traps oxide/ channel interface presented. acceptor-like affect characteristics on-state, whereas influence off-state device. DIBL reduces with introduction traps.